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| BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD646 Collector-base voltage (IE = 0) BD648 BD650 BD652 BD646 Collector-emitter voltage (IB = 0) BD648 BD650 BD652 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot 1/2LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE -80 -100 -120 -140 -60 -80 -100 -120 -5 -8 -12 -0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ C C C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD646 V(BR)CEO IC = -30 mA IB = 0 (see Note 5) BD648 BD650 BD652 VCE = -30 V ICEO Collector-emitter cut-off current VCE = -40 V VCE = -50 V VCE = -60 V VCB = -60 V VCB = -80 V VCB = -100 V ICBO Collector cut-off current VCB = -120 V VCB = -40 V VCB = -50 V VCB = -60 V VCB = -70 V IEBO hFE VCE(sat) VBE(sat) VBE(on) Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VEB = VCE = IB = IB = IB = VCE = -5 V -3 V -12 mA -50 mA -50 mA -3 V IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IC = -3 A -3 A -5 A -5 A -3 A TC = 150C TC = 150C TC = 150C TC = 150C (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 -2 -2.5 -3 -2.5 V V V BD646 BD648 BD650 BD652 BD646 BD648 BD650 BD652 BD646 BD648 BD650 BD652 MIN -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -2.0 -2.0 -2.0 -2.0 -5 mA mA mA V TYP MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.0 62.5 UNIT C/W C/W 2 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS135AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 TCS135AB hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 10000 -1*5 1000 -1*0 VCE = -3 V tp = 300 s, duty cycle < 2% 100 -0*5 -1*0 IC - Collector Current - A -10 TC = -40C TC = 25C TC = 100C -0*5 -0*5 -1*0 IC - Collector Current - A -10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C TCS135AC -2*5 -2*0 -1*5 -1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% -0*5 -0*5 -1*0 IC - Collector Current - A -10 Figure 3. MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 SAS135AC IC - Collector Current - A -1*0 -0*1 -0.01 -1*0 BD646 BD648 BD650 BD652 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS130AC Figure 5. 4 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 |
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